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oH VE S CO AV R M AI SIO PL LA N IA BL S NT E
TISP3070T3BJ THRU TISP3395T3BJ DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
*R
TISP3xxxT3BJ Overvoltage Protector Series
Dual High Current Protectors in a Space Efficient Package - 2 x 100 A 10/560 Current Rating - Modified 3-pin SMB (DO-214AA) Package 50 % Space Saving over Two SMBs - Y Configurations with Two SMB Packages 2 x 80 A, 10/1000 . . . .TISP3xxxT3BJ + TISP4xxxJ1BJ 2 x 100 A, 10/700 . . . .TISP3xxxT3BJ + TISP4xxxH3BJ Ion-Implanted Breakdown Region - Precise and Stable Voltage - Low Voltage Overshoot under Surge
Device TISP3070T3 TISP3080T3 TISP3095T3 TISP3115T3 TISP3125T3 TISP3145T3 TISP3165T3 TISP3180T3 TISP3200T3 TISP3219T3 TISP3250T3 TISP3290T3 TISP3350T3 TISP3395T3 VDRM V 58 65 75 90 100 120 135 145 155 180 190 220 275 320 V(BO) V 70 80 95 115 125 145 165 180 200 219 250 290 350 395
2 (G)
SD3TA A
SMB Package (Top View)
1 2 3
MDXXCJA
Device Symbol
1 (T or R) 3 (T or R)
Rated for International Surge Wave Shapes
Wave Shape 2/10 8/20 10/160 10/700 10/560 Standard GR-1089-CORE IEC 61000-4-5 TIA/EIA-IS-968 (FCC Part 68) ITU-T K.20/.21/.45 TIA/EIA-IS-968 (FCC Part 68) GR-1089-CORE IPPSM A 250 250 150 120 100 80
.......................................UL Recognized Component
10/1000
Description These dual bidirectional thyristor devices protect central office, access and customer premise equipment against overvoltages on the telecom line. The TISP3xxxT3BJ is available in a wide range of voltages and has an 80 A 10/1000 current rating. These protectors have been specified mindful of the following standards and recommendations: GR-1089-CORE, TIA/EIA-IS-968, UL 60950, EN 60950, IEC 60950, ITU-T K.20, K.21 and K.45. The TISP3350T3BJ meets the FCC Part 68 "B" ringer voltage requirement (VDRM = 275 V). Housed in a 3-pin modified SMB (DO-214AA) package, the TISP3xxxT3BJ range is space efficient solution for protection designs of 80 A or less which use multiple SMBs. These devices allow signal voltages, without clipping, up to the maximum off-state voltage value, VDRM, see Figure 1. Voltages above VDRM are limited and will not exceed the breakover voltage, V(BO), level. If sufficient current flows due to the overvoltage, the device switches into a low-voltage on-state condition, which diverts the current from the overvoltage through the device. When the diverted current falls below the holding current, IH, level the device switches off and restores normal system operation. How To Order
For Standard Termination Finish Order As
TISP3xxxT3BJR
Device TISP3xxxT3BJ
Package BJ (3-pin modified SMB/DO-214AA J-Bend)
Carrier R (Embossed Tape Reeled)
For Lead Free Termination Finish Order As
TISP3xxxT3BJR-S
Insert xxx value corresponding to protection voltages of 070, 080, 095, 115, etc.
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex SEPTEMBER 2001 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP3xxxT3BJ Overvoltage Protector Series
Absolute Maximum Ratings, TA = 25 C (Unless Otherwise Noted)
Rating '3070 '3080 '3095 '3115 '3125 '3145 Repetitive peak off-state voltage, (terminals 1-2 and 3-2) '3165 '3180 '3200 '3219 '3250 '3290 '3350 '3395 Non-repetitive peak on-state pulse current (see Notes 1 and 2) 2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape) 8/20 (IEC 61000-4-5, combinat ion wave generator, 1.2/50 voltage wave shape) 10/160 (TIA/EIA-IS-968 (replaces FCC Part 68), 10/160 s voltage wave shape) 5/310 (ITU-T K.44, 10/700 s voltage wave shape used in K.20/.45/.21) 5/320 (TIA/EIA-IS-968 (replaces FCC Part 68), 9/720 s voltage wave shape) 10/560 (TIA/EIA-IS-968 (replaces FCC Part 68), 10/560 s voltage wave shape) 10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape) Non-repetitive peak on-state current (see Notes 1 and 2) 50 Hz, 1 cycle 60 Hz, 1 cycle 1000 s 50 Hz/60 Hz a.c. Initial rate of rise of on-s tate current, Linear current ramp, Maximum ramp value < 50 A Junction temperature Storage temperature range di T/dt TJ Tstg ITSM 2x25 2x30 2x1.2 500 -40 to +150 -65 to +150 A/s C C A IPPSM 2x250 2x250 2x150 2x120 2x120 2x100 2x80 A VDRM Symbol Value 58 65 75 90 100 120 135 145 155 180 190 220 275 320 V Unit
NOTES: 1. Initially, the device must be in thermal equilibrium with TJ = 25 C. 2. These non-repetitive rated currents are peak values of either polarity. The rated current values are applied to the terminals 1 and 3 simultaneously (in this case the terminal 2 return current will be the sum of the currents applied to the terminals 1 and 3). The surge may be repeated after the device returns to its initial conditions.
Recommended Operating Conditions
Component Series resistor for GR-1089-CORE first-level surge survival Series resistor for ITU-T recommendation K. 20/.45/.21 (coordination with 400 V GDT at 4 kV) R1, R2 Series resistor for TIA/EIA-IS-968 (replaces FCC Part 68) 9/720 survival Series resistor for TIA/EIA-IS-968 (replaces FCC Part 68) 10/560 survival Series resistor for TIA/EIA-IS-968 (replaces FCC Part 68) 10/160 survival Min 5 6.4 0 0 2.5 Typ Max Unit
SEPTEMBER 2001 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP3xxxT3BJ Overvoltage Protector Series
Electrical Characteristics for the 1 and 2 or the 3 and 2 Terminals, TA = 25 C
Parameter IDRM Repetitive peak offstate current VD = VDRM Test Conditions TA = 25 C TA = 85 C '3070 '3080 '3095 '3115 '3125 '3145 V(BO) AC breakover voltage dv/dt = 250 V/ms, R SOURCE = 300 '3165 '3180 '3200 '3219 '3250 '3290 '3350 '3395 '3070 '3080 '3095 '3115 '3125 dv/dt 1000 V/s, Linear voltage ramp, V(BO) Ramp breakover voltage Maximum ramp value = 500 V di/dt = 20 A/s, Linear current ramp, Maximum ramp value = 10 A '3145 '3165 '3180 '3200 '3219 '3250 '3290 '3350 '3395 I(BO) IH dv/dt ID Breakover current Holding current Critical rate of rise of off-state voltage Off-state current dv/dt = 250 V/ms, R SOURCE = 300 150 5 TA = 85 C 10 Min Typ Max 5 10 70 80 95 115 125 145 165 180 200 219 250 290 350 395 81 91 107 128 138 159 179 195 215 234 265 304 361 403 800 mA mA kV/s A V V Unit A
IT = 5 A, di/dt = +/-30 mA/ms Linear voltage ramp, Maximum ramp value < 0.85V DRM VD = 50 V
SEPTEMBER 2001 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP3xxxT3BJ Overvoltage Protector Series
Electrical Characteristics for the 1 and 2 or the 3 and 2 Terminals, TA = 25 C (Continued)
Parameter f = 1 MHz, Test Conditions Vd = 1 V rms, VD = 0, `3070 thru `3095 `3115 thru `3219 `3250 thru `3395 f = 1 MHz, Vd = 1 V rms, VD = -1 V `3070 thru `3095 `3115 thru `3219 `3250 thru `3395 Coff Off-state capacitance f = 1 MHz, Vd = 1 V rms, VD = -2 V `3070 thru `3095 `3115 thru `3219 `3250 thru `3395 f = 1 MHz, Vd = 1 V rms, VD = -50 V `3070 thru `3095 `3115 thru `3219 `3250 thru `3395 f = 1 MHz, Vd = 1 V rms, VD = -100 V (see Note 3) NOTE `3250 thru `3395 Min Typ 95 69 51 90 63 46 83 59 42 43 29 20 16 Max 114 83 62 108 76 55 100 70 51 51 35 24 19 pF Unit
3: These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured third terminal is connected to the guard terminal of the bridge.
Thermal Characteristics
Parameter R JA NOTE Junction to free air thermal resistance Test Conditions EIA/JESD51-3 PCB, IT = ITSM(1000), TA = 25 C, (see Note 4) Min Typ Max 90 Unit C/W
4: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
SEPTEMBER 2001 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP3xxxT3BJ Overvoltage Protector Series
Parameter Measurement Information
+i IPPSM Quadrant I Switching Characteristic
ITSM IT VT IH V(BO)
-v IDRM
VDRM
VD
ID ID VD VDRM
IDRM +v
IH V(BO) VT IT I Quadrant III Switching Characteristic IPPSM -i
PM4XAE
ITSM
Figure 1. Voltage-Current Characteristic for Terminal Pairs 1-2 and 3-2 All Measurements are Referenced to Terminal 2
SEPTEMBER 2001 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP3xxxT3BJ Overvoltage Protector Series
Typical Characteristics
OFF-STATE CURRENT vs JUNCTION TEMPERATURE
10 VD = 50 V
Normalized Breakover Voltage 1.10
TC4AH3AA
1.15
NORMALIZED BREAKOVER VOLTAGE vs JUNCTION TEMPERATURE TC4AH3AB
'3115 thru '3219
|ID| - Off-State Current - A
1
'3070 thru '3095 1.05 '3250 thru '3395 1.00
0*1
0*01
0.95
0*001 -25 0 25 50 75 100 125 TJ - Junction Temperature - C 150
0.90 -25 0 25 50 75 100 125 TJ - Junction Temperature - C 150
Figure 2.
Figure 3.
ON-STATE CURRENT vs ON-STATE VOLTAG E
200 150 100 70 IT - On-State Current - A 50 40 30 20 15 10 7 5 4 3
TC3T3AA
2.0
NORMALIZED HOLDING CURRENT vs JUNCTION TEMPERATURE TC4AH3AC
TA = 25 C t W = 100 s
Normalized Holding Current
1.5
1.0 0.9 0.8 0.7 0.6 0.5 0.4
2 1.5 1 0.7 1 1.5 2 3 41 5 7 VT - On-State Voltage - V 0 15 20
-25
0 25 50 75 100 125 TJ - Junction Temperature - C
150
Figure 4.
Figure 5.
SEPTEMBER 2001 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP3xxxT3BJ Overvoltage Protector Series
Typical Characteristics
CAPACITANCE vs OFF-STATE VOLTAGE
90 80 70 Coff - Off-State Capacitance - pF 60 50 40 30
TC4AH3AD
OFF-STATE CAPACITANCE vs RATED REPETITIVE PEAK OFF-STATE VOLTAGE
TC4AH3AF
TJ = 25 C Vd = 1 V rms '3070 thru '3095 '3115 thru '3219 '3250 thru '3395 Coff - Off-State Capacitance - pF
80
VD = 2 V
70
60
50
20 15
40
10 0.5
1
2
3 5 10 20 30 VD - Off-state Voltage - V
50
100150
30 50
60 70 80 90100 150 200 250 300 350 VDRM - Repetivive Peak Off-State Voltage - V
Figure 6.
Figure 7.
SEPTEMBER 2001 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP3xxxT3BJ Overvoltage Protector Series
Rating and Thermal Information
NON-REPETITIVE PEAK ON-STATE CURRENT vs CURRENT DURATION
ITSM(t) - Non-Repetivive Peak On-State Current - A 20 15 10 9 8 7 6 5 4 3 2 1.5 1 0*1 VGEN = 600 V rms, 50/60 Hz RGEN = 1.4*VGEN/ITSM(t) EIA/JESD51-2 ENVIRONMENT EIA/JESD51-3 PCB, TA = 25 C
TI3TAA
VDRM DERATING FACTOR vs MINIMUM AMBIENT TEMPERATURE
1.00 0.99 0.98 Derating Factor 0.97 0.96 '3070 thru 0.95 '3095 0.94 0.93 '3250 thru '3395
TI4AH3AB
SIMULTANEOUS OPERATION OF R AND T TERMINALS. G TERMINAL CURRENT = 2xI TSM(t)
'3115 thru '3219
1
10 100 t - Current Duration - s
1000
0.92 -40 -35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 TAMIN - Minimum Ambient Temperature - C
Figure 8.
Figure 9.
SEPTEMBER 2001 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP3xxxT3BJ Overvoltage Protector Series
MECHANICAL DATA
Recommended Printed Wiring Land Pattern Dimensions
SMB03 Pad Size
2.50 (.099) 1.00 (.039) 2.80 (.110) 0.80 (.032) 1.75 (.069) 1.75 (.069)
DIMENSIONS ARE:
MILLIMETERS (INCHES)
MD3BJAAA
Device Symbolization Code
Devices will be coded as below.
Device
TISP3070T3 TISP3080T3 TISP3095T3 TISP3115T3 TISP3125T3 TISP3145T3 TISP3165T3 TISP3180T3 TISP3200T3 TISP3219T3 TISP3250T3 TISP3290T3 TISP3350T3 TISP3395T3
Symbolization Code
3070T3 3080T3 3095T3 3115T3 3125T3 3145T3 3165T3 3180T3 3200T3 3219T3 3250T3 3290T3 3350T3 3395T3
Carrier Information
For production quantities, the carrier will be embossed tape reel pack. Evaluation quantities may be shipped in bulk pack or embossed tape.
Package
SMB
Carrier
Embossed Tape Reel Pack
Standard Quantity
3000
SEPTEMBER 2001 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP3xxxT3BJ Overvoltage Protector Series
MECHANICAL DATA
Modified SMB (DO-214AA) Plastic Surface Mount Triode Package
This surface mount package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly.
SMB03
4.06 - 4.57 (.160 - .180)
3
3.30 - 3.94 (.130 - .155)
2 1
2.00 - 2.40 (.079 - .094)
0.76 - 1.52 (.030 - .060) 5.21 - 5.59 (.205 - .220)
1.90 - 2.10 (.075 - .083)
0.10 - 0.20 (.004 - .008) 1.42 - 1.57 (.056 - .062)
0.56 - 0.71 (.022 - .028) 0.79 - 0.94 (.031 - .037)
DIMENSIONS ARE:
MILLIMETERS (INCHES)
MDXXCIA
SEPTEMBER 2001 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP3xxxT3BJ Overvoltage Protector Series
MECHANICAL DATA
Tape Dimensions
SMB03 Package Single-Sprocket Tape
3.90 - 4.10 (.154 - .161) 1.95 - 2.05 (.077 - .081)
1.50 MIN. (.059) 1.55 - 1.65 (.061 - .065) 1.65 - 1.85 (.065 - .073) 0.40 MAX. (.016)
5.45 - 5.55 (.215 - .219) 11.70 - 12.30 (.461 - .484)
8.20 MAX. (.323)
e
7.90 - 8.10 (.311 - .319)
Direction of Feed
0 MIN.
Carrier Tape Embossment Cover Tape
4.50 MAX. (.177)
20
Maximum component rotation
Typical component cavity center line Typical component center line
MILLIMETERS DIMENSIONS ARE: (INCHES)
NOTES: A. The clearance between the component and the cavity must be within 0.05 mm (.002 in) MIN. to 0.65 mm (.026 in) MAX. so that the component cannot rotate more than 20 within the determined cavity. B. Taped devices are supplied on a reel of the following dimensions:Reel diameter: 330 mm 3.0 mm (12.99 in .118 in) Reel hub diameter 75 mm (2.95 in) MIN. Reel axial hole: 13.0 mm 0.5 mm (.512 in .020 in) C. 3000 devices are on a reel.
MD3BJAB
"TISP" is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office. "Bourns" is a registered trademark of Bourns, Inc. in the U.S. and other countries.
SEPTEMBER 2001 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.

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